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Second Thermal and Fluids Engineering  Conference

ISSN: 2379-1748
ISBN: 978-1-56700-430-4

Reliability-based optimization of Gallium Nitride Metalorganic Chemical Vapor Deposition process

Pradeep George
Division of Engineering, New York University Abu Dhabi, UAE

Jiandong Meng
Department of Mechanical and Aerospace Engineering Rutgers, The State University of New Jersey Piscataway, NJ 08854, USA

Yogesh Jaluria
Department of Mechanical and Aerospace Engineering Rutgers, The State University of New Jersey Piscataway, NJ 08854, USA

Abstract

The process of chemical vapor Deposition (CVD) in a rotating-disk reactor is simulated and optimized using reliability based approach for Gallium Nitride deposition. The focus is on the rate of deposition and on the uniformity of the Gallium Nitride film produced. Proper control of the governing transport process results in large area film thickness and higher uniformity. Initially, the thin film deposition process is simulated using the Computational Fluid Dynamics (CFD) code, ANSYS FLUENT. The CFD model has 17 gas phase and 23 surface species participating in 17 gas phase and 52 surface reactions. These numerical simulations are used to determine the effects of important design parameters and operating conditions on the deposition rate and the film characteristics. Design variables which have a significant effect on the deposition rate and uniformity of the deposited film are identified as part of the simulation study. Response surfaces for deposition rate and uniformity as a function of these design variables are generated. Compromise response surface method (CRSM) is used for the generation of the response surfaces. In the final part, the response surfaces are used to perform a Reliability based optimization of the conflicting objectives of optimal deposition rate and uniformity by considering the uncertainty in the design variables.

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