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Início Arquivos Representantes Futuras reuniões American Society of Thermal and Fluids Engineering
Second Thermal and Fluids Engineering  Conference

ISSN: 2379-1748
ISBN: 978-1-56700-430-4

Three dimensional numerical simulation of a bubble rising in viscous liquid using OpenFOAM

Ankit Verma
Department of Mechanical Engineering, Texas A&M University

Babu R.
Department of Mechanical Engineering, Indian Institute of Technology Kanpur

Malay K Das
Department of Mechanical Engineering, Indian Institute of Technology Kanpur, Kanpur-208016, India


In this paper, the dynamics of a gas bubble rising in a quiescent fluid column is presented. Three dimensional numerical simulations have been performed and the interface between the two phases is tracked with Volume of Fluid (VOF) method using Continuous Surface Force (CSF) model approach. Newtonian flows are solved using finite volume scheme based on the Pressure Implicit with Splitting of Operators (PISO) algorithm. The interFoam solver of OpenFOAM, an open source computational fluid dynamics software, is used to simulate the rising bubble phenomenon. The numerical method uses an additional surface compression term in the phase fraction equation which improves the interface capturing algorithm by reducing the smearing of the interface. Benchmark configurations of two-dimensional rising bubble is validated. Further, three-dimensional benchmark configurations are proposed for qualitative as well as quantitative comparison of incompressible multiphase flow codes, for the rising bubble problem. For the benchmark geometry, influence on the rising bubble of the variation of Reynolds number and Eotvos number for constant density and viscosity ratio is also studied and the predicted bubble shapes are compared with experiments showing decent match. The air bubble-water solution system is also investigated for the benchmark geometry which shows bubble breakup because of low values of surface tension. Some defects of the algorithm have also been observed like grid-convergence issues and formation of parasitic currents. Also, the solution has to be restricted to low values of Courant number (Co<0.1) which requires longer solution time.

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